document number: 88895 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high current density surface mount ultrafast rectifiers esh1pb, esh1pc, esh1pd vishay general semiconductor new product typical applications for use in secondary rectification and freewheeling for ultrafast switching speeds of ac/ac and dc/dc converters in high temperature conditions for both consumer and automotive applications. features ? very low profile - typical height of 1.0 mm ? ideal for automated placement ? glass passivated chip junction ? ultrafast recovery ti mes for high frequency ? low forward voltage drop, low power loss ? low thermal resistance ? meets msl level 1 per j-std-020, lf maximum peak of 260 c ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to ie c 61249-2-21 definition mechanical data case: do-220aa (smp) molding compound meets ul 94 v-0 flammabi lity rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade base p/nhm3 - halogen-free, rohs compliant, and automotive grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 class 1a whisker test, hm3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes cathode end primary characteristics i f(av) 1.0 a v rrm 100 v, 150 v, 200 v t rr 25 ns v f 0.90 v t j max. 175 c do-220aa ( s mp) e s mp ? s eries maximum ratings (t a = 25 c unless otherwise noted) parameter symbol esh1pb esh1pc esh1pd unit device marking code pb pc pd maximum repetitive pe ak reverse voltage v rrm 100 150 200 v maximum average forward rectified current (fig. 1) i f(av) 1.0 a peak forward surge current 10 ms single half sine-wave superimposed on rated load i fsm 50 a operating junction and storage temperature range t j , t stg - 55 to + 175 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88895 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 19-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 esh1pb, esh1pc, esh1pd vishay general semiconductor new product notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms note (1) automotive grade ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - maximum non-repetitive pe ak forward surge current electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol value unit maximum instantaneous forward voltage i f = 0.7 a t j = 25 c v f (1) 0.86 v i f = 1 a 0.90 maximum reverse current at rated v r voltage t j = 25 c i r (2) 1.0 a t j = 125 c 25 maximum reverse current v r = 20 v t j = 150 c i r 50 a maximum reverse recovery time i f = 0.5 a, i r = 1 a, i rr = 0.25 a t rr 25 ns typical reverse recovery time i f = 1.0 a, v r = 30 v, di/dt = 50 a/s, i rr = 10 % i rm t j = 25 c t rr 25 ns t j = 100 c 35 typical stored charge i f = 1.0 a, v r = 30 v, di/dt = 50 a/s, i rr = 10 % i rm t j = 25 c q rr 10 nc t j = 100 c 15 typical junction capacitance 4.0 v, 1 mhz c j 25 pf ordering information (example) preferred p/n unit weight (g) preferred pa ckage code base quantity delivery mode esh1pb-m3/84a 0.024 84a 3000 7" diam eter plastic tape and reel esh1pb-m3/85a 0.024 85a 10 000 13" di ameter plastic tape and reel esh1pbhm3/84a (1) 0.024 84a 3000 7" diameter plastic tape and reel esh1pbhm3/85a (1) 0.024 85a 10 000 13" diameter plastic tape and reel 0 1.2 95 105 115 125 135 145 155 165 0.8 1.0 0.2 0.4 0.6 175 t l measured at the cathode band terminal lead temperature (c) average forward re ctified current (a) 1 10 100 10 20 30 0 40 50 number of cycles at 50 hz peak forward surge current (a)
document number: 88895 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 esh1pb, esh1pc, esh1pd vishay general semiconductor new product fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse leakage characteristics fig. 5 - typical j unction capacitance fig. 6 - typical transient thermal impedance package outline dimensions in inches (millimeters) 0.4 0.6 0.8 1.2 1.4 0.1 10 1 100 0.01 1.0 0.2 1.6 t j = 150 c t j = 125 c t j = 175 c t j = 25 c instantaneous forward voltage (v) instantaneous forward current (a) 20 40 60 80 100 0.1 1 10 100 10 30 50 70 90 0.01 1000 t j = 150 c t j = 125 c t j = 175 c t j = 25 c percent of rated peak reverse voltage (%) instantaneous reverse current (a) 0.1 10 1 100 1 100 10 1000 reverse voltage (v) junction capaci tance (pf) 0.01 10 1 100 1 10 100 0.1 1000 t - pulse duration (s) transient thermal impedance (c/w) do-220aa ( s mp) cathode band 006 (21) 004 (1) 0142 (61) 0126 (19) 01 (400) 0146 (0) 001 (0) 0004 (010) 0012 (00) 0000 (000) 001 (04) 0006 (01) 004 (11) 00 (0) 006 (091) 0024 (061) 002 (00) 0016 (040) 010 (260) 00 (220) 00 (1) 0041 (10) 0012 (00) ref 0100 (24) 010 (26) 002 (06) 000 (062) 000 (12)
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